This week Intel and Micron Technologies announced a new type of super fast memory they call 3D XPoint Memory that, they say, will be thousands of times faster than either traditional RAM or NAND storage. The new type of storage can be used for both system memory and for nonvolatile storage. The real breakthrough for this technology is that a transistor is not needed for each memory cell the way that current flash memory does. The memory cells can also be stacked in a 3D grid, making the storage much smaller than current memory. There is also less restrictions on the number of reads and writes to each memory cell, making this type of storage much more durable. You can read more about this here and here.